USPTO Patents Application 10507392

ATTORNEY DOCKET NO.: 46884-5318 (210778)
Application No.: 10/507,392
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IN THE CLAIMS;

Please amend the claims as set forth below. This listing of claims will replace all prior
versions, and listings, of claims in the application:

Claims 1-13 (Canceled).

Claim 14 (Currently Amended): A laser processing method comprising the steps of:
irradiating an object to be processed comprising a substrate and a laminate part disposed
on a front face of the substrate with laser light while positioning a light-converging point at least
within the substrate, so as to form a substrate modified region due to multiphoton absorption at
least only within the substrate^ neither m e lting on a laser light incident face of tho obj e ct nor
forming n grnnv a Hn ft tn malting nn the Inn e r light incid e nt face, and causing the substrate
modified region to form forming a starting point region for cutting the object inside the object by
at a predetermined distance from #ie a laser light incident face of the object; and

cutting the substrate and the laminate part along a line when a fracture generated m a
thickness direction of the substrate from the starting point region for cutting reaches a front face
and a rear face of the object.

Claim 15 (Currently Amended): A laser processing method comprising the steps of:
irradiating an object to be processed comprising a substrate and a laminate part disposed

on a front face of the substrate with laser light while positioning a light-converging point at least
within the substrate under a condition with a peak power density of at least 1x10^ (W/cm^) at

ATTORNEY DOCKET NO. : 46884-53 1 8 (2 1 0778)
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the light-converging point and a pulse width of 1 \is or less, so as to form a substrate modified
region including a crack region at least only within the substrate;^ neither m e lting on a laser light
incident face of the object nor forming a groove du e to melting on th e laser light incident fac e ,
and causing the substrate modified region to form forming a starting point region for cutting the
object inside the object by M a predetermined distance from fee a laser Ught incident face of the
object; and

cutting the substrate and the laminate part along a line when a fracture generated in a
thickness direction of the substrate from the startmg point region for cutting reaches a front face
and a rear face of the object.

Claim 16 (Currently Amended): A laser processing method comprising the steps of:
irradiating an object to be processed comprising a substrate and a laminate part disposed
on a front face of the substrate with laser light while positioning a light-converging point at least
within the substrate under a condition with a peak power density of at least 1x10^ (W/cm^) at
the light-converging point and a pulse width of 1 |j,s or less, so as to form a substrate modified
region including a molten processed region at l e ast only within the substrate^ neither m e lting on a
laoor light incident face of the object nor forming a groov e du o to molting on the laser light
incid e nt face, and causing the substrate modified region to form forming a starting point region
for cutting the object inside the object by at a predetermined distance from fee a laser Ught
incident face of fee object; and

ATTORNEY DOCKET NO.: 46884-5318 (210778)
Application No.: 10/507,392
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cutting the substrate and the laminate part along a line when a fracture generated in a
thickness direction of the substrate from the starting point region for cutting reaches a front face
and a rear face of the object.

Claim 17 (Currently Amended): A laser processing method comprising the steps of:
irradiating an object to be processed comprising a substrate and a laminate part disposed
on a front face of the substrate with laser light while positioning a light-converging point at least
within the substrate under a condition with a peak power density of at least 1x10^ (W/cm^) at
the light-converging point and a pulse width of 1 ns or less, so as to form a substrate modified
region including a refractive index change region which is a region with a changed refractive
index at l e ast only within the substrate^ neith e r m e lting on a laser light incident face of th e obj e ct
nor forming a groove due to melting on the laser light incid e nt fac e , and causing the substrate
modified region to form forming a starting point region for cutting the object inside the object at
by a predetermined distance from tite a laser light incident face of the object; and

cutting the substrate and the laminate part along a line when a fracture generated in a
thickness direction of the substrate from the starting point region for cutting reaches a front face
and a rear face of the object.

Claim 18 (Currently Amended): A laser processing method comprising the steps of:
irradiating an object to be processed comprising a substrate and a laminate part disposed

on a front face of the substrate with laser light while positioning a light-converging point at least
within the substrate, so as to form a substrate modified region at least only within the substrate^

ATTORNEY DOCKET NO.: 46884-5318 (210778)
Application No.: 10/507,392
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neither melting on a laser light incident face of the object nor forming a groove due to melting on
the laser light incident face, and causing the substrate modified region to form forming a starting
point region for cutting the object inside the object fey at a predetermined distance from #ie a
laser light incident face of the object; and

cutting the substrate and the laminate part along a line when a fracture generated in a
thickness direction of the substrate from the starting point region for cutting reaches a front face
and a rear face of the object.

Claim 19 (Currently Amended): A laser processing method comprising the steps of:
irradiating an object to be processed comprising a substrate and a laminate part disposed
on a front face of the substrate with laser light while positioning a light-converging point within
the substrate, irradiating the object with laser light while positioning a light-converging point
within the laminate part, so as to form respectiv e modified regions to form a substrate modified
region only within the substrate and a laminate part modified region within the laminate part,
each of the substrate modified region and the laminate part modified region forming a starting
point region for cutting the object inside the object fey at a predetermined distance from a laser
light incident face of the object n e ither melting on a laser light incid e nt face of the obj e ct nor
forming a groove due to m e lting on th e laser light incident fac e ; objecti and

cutting the substrate and the laminate part along a line when a fracture generated in a
thickness direction of the substrate from ^ each starting point region for cutting reaches a front
face and a rear face of the object;

ATTORNEY DOCKET NO.: 46884-5318 (210778)
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wherein the substrate modified region formed only within the substrate and the laminate
part modified region formed within the laminate part are s e parated separate fi'om each other.

Claim 20 (Canceled).

Claun 21 (Currently Amended): A laser processing method according to one of claims
18-19, wherein liie substrate modified region mcludes at least one of a crack region which is a
region where a crack is generated within the substrate, a molten processed region which is a
region subjected to melting within the substrate, and a refractive index change region which is a
region with a changed refractive index within the substrate.

Claim 22 (Previously Presented): A laser processing method according to one of claims
14-19, wherein the laser light irradiating the substrate while positioning the light-converging
point therewithin irradiates the substrate from the rear face thereof.

Claim 23 (Currently Amended): A laser processing method comprismg the steps of:
irradiating a substrate with laser light while positioning a light-converging point within
the substrate, so as to form a modified region due to mtiltiphoton absorption only within the
Gubstrato neither melting on a laoer light incident faco of tho aubotato nor forming a groove du e to
molting on th e las e r light incid e nt face, and causing substrate, the modified region to form
forming a starting point region for cutting the substrate inside the substrate fey at a predetermined
distance from ^ a laser light incident face of the substrate; and

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providing a front face of the substrate with a laminate part on a front face of the substrate
after the step of forming the starting point region for cutting ; and

cutting the substrate and the laminate part along a line when a fracture generated in a
thickness direction of the subsfrate from the starting point region for cutting reaches a front face
of the laminate part and a rear face of the substrate.

Claim 24 (Currently Amended): A laser processing method comprising the steps of:
irradiating an object to be processed comprising a substrate which is made of a
semiconductor material and a laminate part disposed on a front face of the subsfrate with laser
light while positioning a light-converging point at least with the subsfrate under a condition with
a peak power density of at least 1x10^ (W/cm^) at the light-converging point and a pulse width
of 1 ^s or less, so as to form a subsfrate modified region at loaot only within the subsfrate^ nei^
melting on a laser light incid e nt face of th e obj e ct nor forming a groove due to molting on th e
laser light incident face, and causing the subsfrate modified region to form forming a starting
point region for cutting the object inside the object by at a predetermined distance from flie a
laser light incident face of the object; and

cutting the substrate and the laminate part along a line when a fracture generated in a
thickness direction of the subsfrate from the starting point region for cutting reaches a front face
and a rear face of the object.

Claim 25 (Currently Amended): A laser processing method comprising the steps of:

ATTORNEY DOCKET NO. : 46884-53 1 8 (2 1 0778)
Application No.: 10/507,392
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irradiating an object to be processed comprising a substrate which is made of a
piezoelectric material and a laminate part disposed on a front face of the substrate with laser light
while positioning a light-converging point at least within the substrate under a condition with a
peak power density of at least 1 x 10^ (W/cm^) at the light-converging point and a pulse width of
1 ^s or less, so as to form a substrate modified region at least only within the substrate^ neither
melting on a laser light incident face of the object nor forming a groove du e to melting on th e
laser Ught incid e nt face, and causing the substrate modified region to form forming a starting
point region for cutting the object inside the object by at a predetermined distance from iie a
laser light incident face of the object; and

cutting the substrate and the laminate part along a line when a fracture generated in a
thickness direction of the substrate from the starting point region for cutting reaches a front face
and a rear face of the object.

Claim 26 (Currently Amended): A laser processing method comprising the steps of:
irradiating an object to be processed comprising a substrate which is made of a
semiconductor material and a laminate part disposed on a front face of the substrate with laser
light while positioning a light-converging point at least within the substrate, so as to form a
substrate modified region including a molten processed region at least only within the substrate^
neither molting on a laser light incid e nt face of th e object nor forming a groove due to m e lting on
the las e r Ught incid e nt fac e , and causing the substrate modified molten proc e ss e d region to form
forming a starting point region for cutting the object inside the object by at a predetermined
distance from fee a laser light incident face of the object; and

ATTORNEY DOCKET NO.: 46884-5318 (210778)
Application No.: 10/507,392
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cutting the substrate and the laminate part along a line when a fracture generated in a
thickness direction of the substrate from the starting point region for cutting reaches a front face
and a rear face of the object.

Claim 27 (Currently Amended): A laser processing method according to one of claims
14 to 19, wherein the substrate modified region is formed within the substrate such tiiat the
substrate modified region shifts from the center position of the object in the thickness direction
toward a rear face of the substrate.

Claim 28 (Previously Presented): A laser processing method according to claim 27,
further comprising the step of applying stress to the object from the laminate part side after the
step of forming the starting point region for cutting, so as to cut the object along the line.

Claim 29 (Currently Amended): A laser processing method according to one of claims
14 to 19, wherein liie substrate modified region is formed within the substrate such that the
modified region shifts from the center position of the object in the thickness direction toward the
front face of the substrate.

Claim 30 (Previously Presented): A laser processing method according to claim 29,
ftjrther comprising the step of applying stress to the object from the opposite side of the laminate
part after the step of forming the starting point region for cutting, so as to cut the object along the
line.

ATTORNEY DOCKET NO.: 46884-5318 (210778)
Application No.: 10/507,392
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Claim 31 (Previously Presented): A laser processing method according to claim 19,
wherein the substrate and the laminate part are a plurality of substrates formed while abutting.

Claim 32 (Previously Presented): A laser processing method according to claim 19,
wherein the substrate and the laminate part are a plurality of substrates attached to each other
while forming a gap therebetween.

Claim 33 (Previously Presented): A laser processing method according to claim 19,
wherein the modified regions formed within the substrate and the laminate part overlap with each
other along the line, when viewed firom the thickness direction of the object.

Claim 34 (Previously Presented): A laser processing method according to one of claims
14 to 19, wherein the object comprises the substrate and the laminate part, the laminate part
includes a first laminate part which is an oxide film disposed on the front face of the substrate
and a second laminate part disposed on a firont face of the first laminate part.

Claim 35 (Previously Presented): A laser processing method according to one of claims
14 to 19, wherein the object comprises the substrate which is a glass substrate and the laminate
part which is a glass substrate.

ATTORNEY DOCKET NO.: 46884-5318 (210778)
Application No.: 10/507,392
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Claim 36 (Previously Presented): A laser processing method according to one of claims
14 to 19, wherein the object comprises the substrate and the laminate part which is a laminated
functional film.

Claim 37 (Previously Presented): A laser processing method according to one of claims
14 to 19, further comprising the step of cutting the object along the line from the starting point
region for cutting.

Claim 38 (Previously Presented): A laser processing method according to one of claims
24 to 26, further comprising the step of cutting the object along the line from the starting point
region for cutting.

Claim 39 (Currently Amended): A laser processing method comprising the steps of:
providing a front face of a substrate with a laminate part, the substrate having a starting

point region for cutting formed only within the substrate, the starting point region for cutting

formed by a substrate modified region formed at a position of a light-converging point in

irradiation of laser light; and

cutting the substrate and the laminate part along a line when a fracture generated in a

thickness direction of the substrate from the starting point region for cutting reaches a front face

of the laminate part and a rear face of the subsfrate.

Claim 40 (Canceled).

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Claim 41 (Currently Amended): A method of manufacturing a semiconductor device
formed using a laser processing method, the manufacturing method comprising:

irradiating an object to be processed comprising a substrate and a laminate part disposed
on a front face of the substrate, the substrate comprising semiconductor material and the laminate
part having at least one semiconductor device, with laser light while positioning a light-
converging point at least within the substrate, so as to form a substrate modified region due to
multiphoton absorption at least only within the substrate^ neither molting on a laoor light incident
fac e of th e object nor forming a groove du e to melting on the laser light incid e nt fac e , with the
substrate modified region forming a starting point region for cutting the object, the substrate
modified region being located inside the object by at a predetermined distance from *e a laser
light incident face of the object; and

cutting the substrate and the laminate part along a line when a fracture generated in a
thickness direction of the substrate from the starting point region for cutting reaches a front face
and a rear face of the object in order to provide at least one manufactured semiconductor device.

Claim 42 (Currently Amended): A method of manufacturing a semiconductor device
formed using a laser processing method, the manufacturing method comprising:

irradiating an object to be processed comprising a substrate and a laminate part disposed
on a front face of the substrate, the substrate comprismg oomiconductor material and the laminate
part having at least one semiconductor device, with laser light while positioning a light-
converging point at least within the substrate imder a condition with a peak power density of at

ATTORNEY DOCKET NO.: 46884-5318 (210778)
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least 1x10^ (W/cm^) at the light-converging point and a pulse width of 1 |xs or less, so as to
form a substrate modified region including a crack region at l e ast only within the substrate^
neither melting on a laser light incident face of the object nor forming a groove due to melting on
the laser light incident fac e , with the substrate modified region forming a starting point region for
cutting the object, the substrate modified region being located inside the object by at a
predetermined distance from fihe a laser light incident face of the object; and

cutting the substrate and the laminate part along a line when a fracture generated in a
thickness direction of the substrate from the starting point region for cutting reaches a front face
and a rear face of the object in order to provide at least one manufactured semiconductor device.

Claim 43 (Currently Amended): A method of manufacturing a semiconductor device
formed using a laser processing method, the manufacturing method comprising:

irradiating an object to be processed comprising a substrate and a laminate part disposed
on a front face of the substrate, the substrate comprising semiconductor material and the laminate
part having at least one semiconductor device, with laser light while positioning a light-
converging point at least within the substrate under a condition with a peak power density of at
least 1x10^ (W/cm^) at the light-converging point and a pulse width of 1 \is or less, so as to
form a substrate modified region including a molten processed region at least only within the
substrate^ neith e r melting on a las e r light incid e nt face of the obj e ct nor forming a groov e du e to
melting on the laser light incident face, with the substrate modified region forming a starting
point region for cutting the object, the substrate modified region being located inside the object
fey at a predetermined distance from fee a laser light incident face of the object; and

ATTORNEY DOCKET NO.: 46884-5318 (210778)
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cutting the substrate and the laminate part along a line when a fracture generated in a
thickness direction of the substrate from the starting point region for cutting reaches a front face
and a rear face of the object in order to provide at least one manufactured semiconductor device.

Claim 44 (Currently Amended): A method of manufacturing a semiconductor device
formed using a laser processing method, the manufacturing melhod comprising:

irradiating an object to be processed comprising a substrate and a laminate part disposed
on a front face of the substrate, the substrate comprising Gemiconductor material and the laminate
part having at least one semiconductor device, with laser light while positioning a light-
converging point at least within the substrate under a condition with a peak power density of at
least 1x10* (W/cm^) at the light-converging point and a pulse width of 1 ns or less, so as to
form a substrate modified region including a refractive index change region which is a region
with a changed refractive index at least only within the substrate^ neither molting on a laser light
incident face of the object nor forming a groove due to melting on the las e r light incid e nt face,
with th e modified region forming a starting point region for cutting the obj e ct, the substrate
modified region forming a starting point region for cuttmg the object the substrate modified
region being located inside the object by a predetermined distance from ^ a laser light incident
face of the object; and

cutting the substrate and the laminate part along a line when a fracture generated in a
thickness direction of the substrate from the starting point region for cutting reaches a front face
and a rear face of the object in order to provide at least one manufactured semiconductor device.

ATTORNEY DOCKET NO. : 46884-53 1 8 (2 1 0778)
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Claim 45 (Currently Amended): A method of manufacturing a semiconductor device
formed using a laser processing method, the manufacturing method comprising:

irradiating an object to be processed comprising a substrate and a laminate part disposed
on a front face of the substrate, the substrate comprising semiconductor mat e rial and the laminate
part having at least one semiconductor device, with laser light while positioning a light-
converging point at least within the substrate, so as to form a substrate modified region at least
only within the substrate^ neith e r melting on a laser Ught incid e nt face of th e object nor forming a
groov e du e to melting on the laser light incident fac e , with the substrate modified region forming
a starting point region for cutting the object, the substrate modified region being located inside
the object by at a predetermined distance from a laser light incident face of the object; and

cutting the substrate and the laminate part along a line when a fracture generated in a
thickness direction of the substrate from the starting point region for cutting reaches a front face
and a rear face of the object in order to provide at least one manufactured semiconductor device.

Claim 46 (Currently Amended): A method of manufacturing a semiconductor device
formed using a laser processing method, the manufacturing method comprising:

irradiating an object to be processed comprising a substrate and a laminate part disposed
on a front face of the substrate, the substrate comprising semiconductor material and the laminate
part having at least one semiconductor device, with laser light while positioning a Ught-
converging point within the substrate, irradiating the object with laser light while positioning a
light-converging point within the laminate part, so as to form respective a substrate modified
region only within the substrate and a laminate part modified region within the laminate part.

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each of the substrate modified r e gions to form region and the laminate part modified region
forming a starting point region for cutting the object located inside the object by at a
predetermined distance firom a laser light incident face of the object neither melting on a las e r
light incident face of the object nor forming a groove due to m e lting on th e laser light incident
^€e; and

cutting the substrate and the laminate part along a line when a fracture generated in a
thickness direction of the substrate from the starting point region for cutting reaches a firont face
and a rear face of the object in order to provide at least one manufactured semiconductor device;

wherein the substrate modified region formed only within the substrate and the laminate
part modified region formed within the laminate part are separated separate fi'om each other.

Claim 47 (Canceled).

Claim 48 (Currently Amended): A method of manufacturing a semiconductor device
formed using a laser processing method, the manufacturing method comprising:

irradiating a substrate, the substrate comprising semiconductor material and having a
surface form e d with at least one s e miconductor d e vic e , with laser light while positioning a light-
converging point within the substrate, so as to form a substrate modified region du e to
multiphoton absorption onlv within the substratCj neith e r melting on a las e r light incid e nt face of
the object nor forming a groove due to melting on the laser light incident face, and with the
modified region forming a starting point region for cutting the substrate, the modified region

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being located only inside the substrate by at a predetermined distance from a laser light incident
face of the substrate;

providing a front face of the substrat e wilh a laminate part on a front face of the substrate
after the step of forming the starting point region for cutting ; and

cutting the substrate and the laminate part along a line when a fracture generated in a
thickness direction of the substrate from the starting point region for cutting reaches a front face
of the laminate part and a rear face of the substrate in order to provide at least one manufactured
semiconductor device.

Claim 49 (Currently Amended): A method of manufacturing a semiconductor device
formed using a laser processing method, the manufacturing method comprising:

irradiating an object to be processed comprising a substrate and a laminate part disposed
on a front face of the substrate, the substrate comprising semiconductor mat e rial and the laminate
part having at least one semiconductor device, with laser light while positioning a light-
converging point at least with the substrate under a condition with a peak power density of at
least 1x10^ (W/cm^) at the light-converging point and a pulse width of 1 \is or less, so as to
form a substrate modified region at least only within the substrate^ n e ither melting on a laser
light incident face of the object nor forming a groove duo to melting on the loser light incid e nt
face, with the substrate modified region forming a starting point region for cutting the object, the
substrate modified region being located inside the object by at a predetermined distance from tihe
a laser light incident face of the object; and

ATTORNEY DOCKET NO.: 46884-5318 (210778)
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cutting the substrate and the laminate part along a line when a fracture generated in a
thickness direction of the substrate from the starting point region for cutting reaches a front face
and a rear face of the object in order to provide at least one manufactured semiconductor device.

Claim 50 (Currently Amended): A method of manufacturing a semiconductor device
formed using a laser processing method, the manufacturing method comprising:

irradiating an object to be processed comprising a substrate and a laminate part disposed
on a front face of the substrate, the substrate comprising s e miconductor material and the laminate
part having at least one semiconductor device, with laser light while positioning a Ught-
converging point at least within the substrate^, neither molting on a laoor light incident face of the
object nor forming a groove duo to melting on the las e r light incident face, so as to form a
substrate modified region including a molten processed region at least onlv within the substrate,
with the molten procoooed substrate modified region forming a starting point region for cutting
the object, the molten processed region being located inside the object by at a predetermined
distance from #ie a laser light incident face of the object; and

cutting the substrate and the laminate part along a line when a fracture generated in a
thickness direction of the substrate from the starting point region for cutting reaches a front face
and a rear face of the object in order to provide at least one manufactured semiconductor device.

Claim 51 (Cvurrentiy Amended): A method of manufacturing a semiconductor device
formed using a laser processing method, the manufacturing method comprising:

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providing a front face of a substrate with a laminate part, the substrate comprising
semiconductor material and the laminate part having at least one semiconductor device, the
substrate having a starting point region for cutting formed only within the substrate, the starting
point region for cutting formed by a substrate modified region formed at a position of a light-
converging point in irradiation of laser light; and

cutting the substrate and the laminate part along a line when a fracture generated in a
thickness direction of the substrate from the starting point region for cutting reaches a front face
of the laminate part and a rear face of the substrate in order to provide at least one manufactured
semiconductor device.

Claim 52 (Currently Amended): A method of manufacturing a semiconductor device
according to claim 45, wherein the object is irradiated with laser light while positioning a light-
converging point within the laminate part, so as to form a laminate part modified region within
the laminate part in the irradiating step, and the substrate modified region formed within the
substrate and the laminate part modified region formed within the laminate part are separated
from each other.

Claim 53 (Canceled).

Claim 54 (Currently Amended): A method of manufacturing a semiconductor device

according to claim 48, wherein the object is irradiated with laser light while positioning a light-
converging point within the laminate part, so as to form a laminate part modified region within
the laminate part in the irradiating step, and the substrate modified region formed within the

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substrate and the laminate part modified region formed within the laminate part are separated
from each other.

Claim 55 (Currently Amended): A method of manufacturing a semiconductor device
according to claim 50, wherein the object is irradiated with laser Ught while positioning a light-
converging point within the laminate part, so as to form a laminate part modified region within
the laminate part in the irradiating step, and the substrate modified region formed within the
substrate and the laminate part modified region formed within the laminate part are separated
from each other.

Claim 56 (Currently Amended): A method of manufacturing a semiconductor device
according to claim 51, wherein the object is irradiated with laser light while positioning a light-
converging point within the laminate part, so as to form a laminate part modified region within
the laminate part in the irradiating step, and the substrate modified region formed within the
substrate and the laminate part modified region formed within the laminate part are separated
from each other.

Claim 57 (Withdrawn - Currently Amended): The method according to any one of
claims 14-2019 and 23-25^26, wherein the irradiation of the laser light is performed without
making any groove on a laser incident face of the substrate and to make a the substrate modified
region and a non-modified region within the substrate and in a laser light incident direction.

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Claim 58 (Withdrawn - Currently Amended): The method according to any one of
claims 14-3019 and 23-2526, wherem the irradiation of the laser light is performed to make the
substrate modified region without intentionally exposing the substrate modified region in at least
one of a front and back faces of the substrate into which the laser light enters.

Claim 59 (Withdrawn - Currently Amended): The method according to any one of
claims 41 -[[4911 46 and 48-50. wherein the irradiation of the laser light is performed without
making any groove on a laser incident face of the substrate and to make a the substrate modified
region and a non-modified region within the substrate and in a laser light incident direction.

Claim 60 (Withdrawn - Currently Amended): The method according to any one of
claims 41-[[49]]46and48i50, wherein the irradiation of the laser light is performed to make the
substrate modified region without intentionally exposing the modified region in at least one of a
front face and a back face of the substrate.

Claim 61 (Withdrawn): The method according to claim 58, wherein the at least one of
the fi-ont and back face of the substrate is a surface of the substrate into which the laser light
enters.

Claim 62 (Withdrawn): The method according to claim 60, wherein the at least one of
the front and back face of the substrate is a surface of the substrate into which the laser light
enters.